Invention Grant
- Patent Title: Semiconductor memory device and method for operating the same
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US12006121Application Date: 2007-12-31
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Publication No.: US07848178B2Publication Date: 2010-12-07
- Inventor: Kyung-Hoon Kim , Sang-Sik Yoon
- Applicant: Kyung-Hoon Kim , Sang-Sik Yoon
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: KR10-2007-0111564 20071102
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Semiconductor memory device and method for operating the same includes a phase detection unit configured to compare a phase of a first reference clock and a phase of a second divided reference clock to output a comparison result signal and a phase control and division unit configured to generate the second divided reference clock by dividing a second reference clock by a predetermined ratio according to the comparison result signal outputted from the phase detection unit and adjusting a phase of the second reference clock.
Public/Granted literature
- US20090116331A1 Semiconductor memory device and method for operating the same Public/Granted day:2009-05-07
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