A laser exposure which includes: a laser light source including a multi-transverse mode semiconductor laser; a far-field pattern forming optical system for forming a far-field pattern of multi-transverse mode laser light emitted from the laser light source; a condensing optical system for condensing the laser light emitted from the far-field pattern forming optical system and applying the condensed laser light to a substance to be exposed; and a coherency reducing element disposed in an optical path between the laser light source and the substance to be exposed, for reducing coherency of two wavefront components that are contained in high-order transverse mode light of each order emitted from the laser light source and propagate in substantially symmetrical directions with respect to the optical axis.