Invention Grant
- Patent Title: Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
- Patent Title (中): 基于利用多层屏障的磁隧道结的装置和电路
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Application No.: US11520868Application Date: 2006-09-13
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Publication No.: US07851840B2Publication Date: 2010-12-14
- Inventor: Zhitao Diao , Yiming Huai
- Applicant: Zhitao Diao , Yiming Huai
- Applicant Address: US CA Milpitas
- Assignee: Grandis Inc.
- Current Assignee: Grandis Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/96
- IPC: H01L29/96 ; H01L43/08
Abstract:
Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.
Public/Granted literature
- US20080061388A1 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier Public/Granted day:2008-03-13
Information query
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