Invention Grant
- Patent Title: Memory device having cross-shaped semiconductor fin structure
- Patent Title (中): 存储器件具有十字形半导体鳍结构
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Application No.: US12013969Application Date: 2008-01-14
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Publication No.: US07851844B2Publication Date: 2010-12-14
- Inventor: Koen van der Zanden , Thomas Schulz
- Applicant: Koen van der Zanden , Thomas Schulz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/792 ; H01L21/3361
Abstract:
In an embodiment, a memory device, including: a semiconductor fin structure, each end portion of the fin structure including a source/drain region; a charge storage layer covering at least a portion of the fin structure; and a gate layer covering at least a portion of the charge storage layer.
Public/Granted literature
- US20090179250A1 Memory Device Public/Granted day:2009-07-16
Information query
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