Invention Grant
US07851887B2 Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same
有权
具有具有良好接触面积的加热器电极的相变存储器件及其制造方法
- Patent Title: Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same
- Patent Title (中): 具有具有良好接触面积的加热器电极的相变存储器件及其制造方法
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Application No.: US12344777Application Date: 2008-12-29
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Publication No.: US07851887B2Publication Date: 2010-12-14
- Inventor: Min Seok Son
- Applicant: Min Seok Son
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0092222 20080919
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A phase change memory device includes a semiconductor substrate having a conductive region, a heater electrode formed on the semiconductor substrate and including a connection element which is composed of carbon nanotubes electrically connected with the conductive region, and a phase change pattern layer contacting the connection element of the heater electrode.
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