Invention Grant
- Patent Title: Leakage control
- Patent Title (中): 泄漏控制
-
Application No.: US12326086Application Date: 2008-12-01
-
Publication No.: US07852113B2Publication Date: 2010-12-14
- Inventor: Esin Terzioglu , Gil I. Winograd
- Applicant: Esin Terzioglu , Gil I. Winograd
- Applicant Address: US CA Laguna Hills
- Assignee: Novelics, LLC.
- Current Assignee: Novelics, LLC.
- Current Assignee Address: US CA Laguna Hills
- Agency: Haynes & Boone, LLP.
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
In one embodiment, a leakage reduction circuit is provided that includes: a virtual power supply node; a first PMOS transistor coupled between the virtual power supply node and a power supply node; a second PMOS transistor having a source coupled to the power supply node; and a native NMOS transistor coupled between a drain of the second PMOS transistor and the virtual power supply node, the native NMOS transistor having a gate driven by the power supply node.
Public/Granted literature
- US20090189685A1 Leakage Control Public/Granted day:2009-07-30
Information query