Invention Grant
- Patent Title: Bias network
- Patent Title (中): 偏差网络
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Application No.: US12189888Application Date: 2008-08-12
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Publication No.: US07852136B2Publication Date: 2010-12-14
- Inventor: John P. Bettencourt
- Applicant: John P. Bettencourt
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A network having a current mirror comprising: a output transistor having a gate electrode for controlling a first current between a first electrode and a second electrode, the first electrode being coupled to a positive reference potential and the second electrode being connected to ground. A second transistor has a gate electrode for controlling a second current between a first electrode and a second electrode of the second transistor. The gate electrodes are connected together to produce the first current and the second current with equal current densities. A first portion of current from a current source is fed to the first electrode of the second transistor and a second portion of current from the current source is fed to a bias voltage producing circuit producing a bias voltage at the gate electrode of the output transistor for tracking variations in the first current passing through the output transistor.
Public/Granted literature
- US20100039168A1 BIAS NETWORK Public/Granted day:2010-02-18
Information query
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