A nonvolatile memory using a resistance material includes first and second memory-cell blocks having different block address information and each including a plurality of nonvolatile memory cells; a global bitline common to the first and second memory-cell blocks; first and second local bitlines corresponding to the first and second memory-cell blocks, respectively, and coupled to each other; and a common bitline selection circuit interposed between the first and second memory-cell blocks and coupled between the first and second local bitlines and the global bitline.