Invention Grant
US07852670B2 Method for increasing storage capacity of a memory device 失效
提高存储设备存储容量的方法

  • Patent Title: Method for increasing storage capacity of a memory device
  • Patent Title (中): 提高存储设备存储容量的方法
  • Application No.: US12065838
    Application Date: 2005-09-05
  • Publication No.: US07852670B2
    Publication Date: 2010-12-14
  • Inventor: Elisha Atzmon
  • Applicant: Elisha Atzmon
  • Applicant Address: IL Herzliya
  • Assignee: Megamem Ltd.
  • Current Assignee: Megamem Ltd.
  • Current Assignee Address: IL Herzliya
  • Agency: Browdy and Neimark, PLLC
  • International Application: PCT/IL2005/000939 WO 20050905
  • International Announcement: WO2007/029223 WO 20070515
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Method for increasing storage capacity of a memory device
Abstract:
A method for increasing memory storage capacity in a memory device having at least two storage cells wherein at least one measurable physical property is associated with each of the storage cells a nominal value of which may be used to assign a data value to the respective storage cell. Differences between at least two storage cells with regard to the respective nominal values of one or more of the respective physical properties associated with a storage cell and its actual value at a given time are used to provide additional storage capacity.
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