Invention Grant
US07852678B2 Non-volatile memory with improved sensing by reducing source line current
有权
通过减少源极线电流来改善感测的非易失性存储器
- Patent Title: Non-volatile memory with improved sensing by reducing source line current
- Patent Title (中): 通过减少源极线电流来改善感测的非易失性存储器
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Application No.: US12507752Application Date: 2009-07-22
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Publication No.: US07852678B2Publication Date: 2010-12-14
- Inventor: Raul-Adrian Cernea
- Applicant: Raul-Adrian Cernea
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.
Public/Granted literature
- US20090296489A1 Non-Volatile Memory With Improved Sensing By Reducing Source Line Current Public/Granted day:2009-12-03
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