Invention Grant
- Patent Title: Memory cell programming
- Patent Title (中): 存储单元编程
-
Application No.: US11926713Application Date: 2007-10-29
-
Publication No.: US07853841B2Publication Date: 2010-12-14
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Embodiments of the present disclosure provide methods, devices, and systems for performing a programming operation on an array of non-volatile memory cells. One method includes programming a number of cells to a number of final data states. The method includes performing, prior to completion of, e.g., finishing, the programming operation, an erase state check on a subset of the number of cells, which were to be programmed to an erased state.
Public/Granted literature
- US20090113259A1 MEMORY CELL PROGRAMMING Public/Granted day:2009-04-30
Information query