Invention Grant
- Patent Title: Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
- Patent Title (中): 含硅成膜组合物，含硅膜，含硅膜基材和图案化方法
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Application No.: US11808100Application Date: 2007-06-06
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Publication No.: US07855043B2Publication Date: 2010-12-21
- Inventor: Tsutomu Ogihara , Takafumi Ueda , Takeshi Asano , Motoaki Iwabuchi
- Applicant: Tsutomu Ogihara , Takafumi Ueda , Takeshi Asano , Motoaki Iwabuchi
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Priority: JP2006-167242 20060616
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/09 ; G03F7/20 ; G03F7/30 ; G03F7/36
Abstract:
A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
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