Invention Grant
- Patent Title: Fabrication method of pixel structure
- Patent Title (中): 像素结构的制作方法
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Application No.: US12779940Application Date: 2010-05-13
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Publication No.: US07855112B2Publication Date: 2010-12-21
- Inventor: Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
- Applicant: Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW96123782A 20070629
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L23/62

Abstract:
A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a semiconductor pattern and a data line pattern. A gate insulation layer and a second conductive layer are formed on the substrate in sequence and patterned to form a gate pattern and a scan line pattern connected to each other. A source region, a drain region, a channel region, and a lightly doped region are formed in the semiconductor pattern. A third conductive layer formed on the substrate is patterned to form a source pattern and a drain pattern. A protective layer is formed on the substrate and patterned to form a contact window to expose the drain pattern. A pixel electrode electrically connected to the drain pattern through the contact window is formed on the protective layer.
Public/Granted literature
- US20100233859A1 FABRICATION METHOD OF PIXEL STRUCTURE Public/Granted day:2010-09-16
Information query
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