Invention Grant
US07855129B2 Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
有权
通过该方法制造直接键合SOI晶片和直接键合SOI晶片的方法
- Patent Title: Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
- Patent Title (中): 通过该方法制造直接键合SOI晶片和直接键合SOI晶片的方法
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Application No.: US12778382Application Date: 2010-05-12
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Publication No.: US07855129B2Publication Date: 2010-12-21
- Inventor: Etsurou Morita , Shinji Okawa , Isoroku Ono
- Applicant: Etsurou Morita , Shinji Okawa , Isoroku Ono
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.
Public/Granted literature
- US20100219500A1 METHOD FOR MANUFACTURING DIRECT BONDED SOI WAFER AND DIRECT BONDED SOI WAFER MANUFACTURED BY THE METHOND Public/Granted day:2010-09-02
Information query
IPC分类:
