Invention Grant
US07855145B2 Gap filling method and method for forming semiconductor memory device using the same
失效
用于形成半导体存储器件的间隙填充方法和方法
- Patent Title: Gap filling method and method for forming semiconductor memory device using the same
- Patent Title (中): 用于形成半导体存储器件的间隙填充方法和方法
-
Application No.: US11783975Application Date: 2007-04-13
-
Publication No.: US07855145B2Publication Date: 2010-12-21
- Inventor: Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
- Applicant: Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0036699 20060424
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
Public/Granted literature
Information query
IPC分类:
