Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials

Invention Grant

US07855154B2 Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials 有权

Title translation: 使用旋涂，光图案化，层间介电材料形成中间半导体器件结构的方法

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Patent Title: Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials
Patent Title (中): 使用旋涂，光图案化，层间介电材料形成中间半导体器件结构的方法
Application No.: US11391774

Application Date: 2006-03-29
Publication No.: US07855154B2

Publication Date: 2010-12-21
Inventor: Weimin Li , Gurtej S. Sandhu
Applicant: Weimin Li , Gurtej S. Sandhu
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/316
IPC: H01L21/316

Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials

Abstract:

A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.

Abstract(Chinese):

能够使光可图案化的旋涂材料用于以前不可用的波长形成半导体器件结构的盖层。将可光刻图案的旋涂材料作为层施加到半导体衬底。覆盖层和光致抗蚀剂层各自形成在光图案化层上。盖层吸收或反射辐射，并保护光致图案层免受用于图案化光致抗蚀剂层的第一波长的辐射。照射图案化的旋涂材料在暴露于第二波长辐射时可转换为二氧化硅基材料。

Public/Granted literature

US20060172079A1 Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials Public/Granted day:2006-08-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层