Invention Grant
US07855428B2 Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer
有权
在浅沟槽隔离结构和掩埋氧化物层之间的界面处的导电衬垫
- Patent Title: Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer
- Patent Title (中): 在浅沟槽隔离结构和掩埋氧化物层之间的界面处的导电衬垫
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Application No.: US12115699Application Date: 2008-05-06
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Publication No.: US07855428B2Publication Date: 2010-12-21
- Inventor: Robert H. Dennard , Mark C. Hakey , David V. Horak , Sanjay Mehta
- Applicant: Robert H. Dennard , Mark C. Hakey , David V. Horak , Sanjay Mehta
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The invention relates to a design structure, and more particularly, to a design structure for a conductive liner for rad hard total dose immunity and a structure thereof. The structure includes at least one shallow trench isolation structure having oxide material and formed in an SOI. A dielectric liner is formed at an interface of the SOI within the at least one shallow trench isolation structure. A metal or metal alloy layer is formed in the at least one shallow trench isolation structure and between the dielectric liner and the oxide material.
Public/Granted literature
- US20090278226A1 STRUCTURE FOR CONDUCTIVE LINER FOR RAD HARD TOTAL DOSE IMMUNITY AND STRUCTURE THEREOF Public/Granted day:2009-11-12
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