Invention Grant
- Patent Title: Electronic circuit device having silicon substrate
- Patent Title (中): 具有硅衬底的电子电路器件
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Application No.: US12288814Application Date: 2008-10-23
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Publication No.: US07855429B2Publication Date: 2010-12-21
- Inventor: Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
- Applicant: Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
- Assignee: Makoto Ishida,Seiko Instruments Inc.
- Current Assignee: Makoto Ishida,Seiko Instruments Inc.
- Agency: Adams & Wilks
- Priority: JP2004-105220 20040331
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/02

Abstract:
An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.
Public/Granted literature
- US20090065894A1 Electronic circuit device having silicon substrate Public/Granted day:2009-03-12
Information query
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