Invention Grant
US07855455B2 Lock and key through-via method for wafer level 3 D integration and structures produced
有权
用于晶圆级3D集成和结构的锁定和键通孔方法
- Patent Title: Lock and key through-via method for wafer level 3 D integration and structures produced
- Patent Title (中): 用于晶圆级3D集成和结构的锁定和键通孔方法
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Application No.: US12239688Application Date: 2008-09-26
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Publication No.: US07855455B2Publication Date: 2010-12-21
- Inventor: Sampath Purushothaman , Mary E. Rothwell , Ghavam Ghavami Shahidi , Roy Rongqing Yu
- Applicant: Sampath Purushothaman , Mary E. Rothwell , Ghavam Ghavami Shahidi , Roy Rongqing Yu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: The Law Offices of Robert J. Eichelburg
- Agent Robert J. Eichelburg
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
Public/Granted literature
- US20100078770A1 Lock and Key Through-Via Method for Wafer Level 3 D Integration and Structures Produced Public/Granted day:2010-04-01
Information query
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