Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12422712Application Date: 2009-04-13
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Publication No.: US07855590B2Publication Date: 2010-12-21
- Inventor: Yusuke Kanno , Kazuo Tanaka , Shunsuke Toyoshima , Takeo Toba
- Applicant: Yusuke Kanno , Kazuo Tanaka , Shunsuke Toyoshima , Takeo Toba
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-120605 20050419
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.
Public/Granted literature
- US20090195292A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-08-06
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