Invention Grant
US07855862B1 Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path
有权
静电放电（ESD）电路及方法，包括信号通道中的P沟道器件
- Patent Title: Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path
- Patent Title (中): 静电放电（ESD）电路及方法，包括信号通道中的P沟道器件
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Application No.: US11726612Application Date: 2007-03-21
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Publication No.: US07855862B1Publication Date: 2010-12-21
- Inventor: Kevin Gallagher , Gerald Murphy , Andrew Walker
- Applicant: Kevin Gallagher , Gerald Murphy , Andrew Walker
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H02H9/00
- IPC: H02H9/00
Abstract:
One example of an ESD protection circuit (100) can include a p-channel field effect transistor (PFET) (110) having a source-drain path connected between a pad (102) and a protected circuit (106). In an ESD event, PFET (110) can provide an ESD discharge path between pad (102) and a high power supply node (114) or low power supply node (112).
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