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US07855914B2 Semiconductor memory device capable of suppressing peak current 有权
能够抑制峰值电流的半导体存储器件

Semiconductor memory device capable of suppressing peak current
Abstract:
A memory cell array includes a plurality of memory cells, in which n (n is a natural number equal to 3 or larger) cells are simultaneously written. A control circuit controls the memory cell array. A conversion circuit converts data constituted of k (k is equal to n or smaller, and is a natural number equal to 3 or larger) bits stored in the memory cells into data of h (h is equal to k or larger, and is a natural number equal to 2 or larger) bits on the basis of a conversion rule.
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