Invention Grant
- Patent Title: Semiconductor memory device capable of suppressing peak current
- Patent Title (中): 能够抑制峰值电流的半导体存储器件
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Application No.: US12179076Application Date: 2008-07-24
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Publication No.: US07855914B2Publication Date: 2010-12-21
- Inventor: Noboru Shibata
- Applicant: Noboru Shibata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-199947 20070731
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C7/00 ; G06F13/12

Abstract:
A memory cell array includes a plurality of memory cells, in which n (n is a natural number equal to 3 or larger) cells are simultaneously written. A control circuit controls the memory cell array. A conversion circuit converts data constituted of k (k is equal to n or smaller, and is a natural number equal to 3 or larger) bits stored in the memory cells into data of h (h is equal to k or larger, and is a natural number equal to 2 or larger) bits on the basis of a conversion rule.
Public/Granted literature
- US20090034329A1 SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SUPPRESSING PEAK CURRENT Public/Granted day:2009-02-05
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