Invention Grant
- Patent Title: Method for self-aligned doubled patterning lithography
- Patent Title (中): 自对准双重图案平版印刷的方法
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Application No.: US12264853Application Date: 2008-11-04
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Publication No.: US07856613B1Publication Date: 2010-12-21
- Inventor: Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- Applicant: Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Sheppard Mullin Ritcher & Hampton LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00
Abstract:
Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.
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