Invention Grant
- Patent Title: Bevel etcher with gap control
- Patent Title (中): 斜角蚀刻机具有间隙控制
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Application No.: US11698191Application Date: 2007-01-26
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Publication No.: US07858898B2Publication Date: 2010-12-28
- Inventor: Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
- Applicant: Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: B23K10/00
- IPC: B23K10/00

Abstract:
A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
Public/Granted literature
- US20080179297A1 Bevel etcher with gap control Public/Granted day:2008-07-31
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