Invention Grant
US07858960B2 Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices
有权
具有用于隔离由生长形成的接触结构的绝缘层的相变存储器件，具有该接触结构的半导体器件及其制造方法
- Patent Title: Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices
- Patent Title (中): 具有用于隔离由生长形成的接触结构的绝缘层的相变存储器件，具有该接触结构的半导体器件及其制造方法
-
Application No.: US12330068Application Date: 2008-12-08
-
Publication No.: US07858960B2Publication Date: 2010-12-28
- Inventor: Heon Yong Chang
- Applicant: Heon Yong Chang
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0099559 20081010
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress.
Public/Granted literature
Information query
IPC分类:
