Invention Grant
US07858979B2 Method of aligning deposited nanotubes onto an etched feature using a spacer
有权
使用间隔物将沉积的纳米管对准蚀刻特征的方法
- Patent Title: Method of aligning deposited nanotubes onto an etched feature using a spacer
- Patent Title (中): 使用间隔物将沉积的纳米管对准蚀刻特征的方法
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Application No.: US12475013Application Date: 2009-05-29
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Publication No.: US07858979B2Publication Date: 2010-12-28
- Inventor: Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- Applicant: Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- Applicant Address: US MA Woburn
- Assignee: Nantero, Inc.
- Current Assignee: Nantero, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00
Abstract:
A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
Public/Granted literature
- US20090243102A1 METHOD OF ALIGNING DEPOSITED NANOTUBES ONTO AN ETCHED FEATURE USING A SPACER Public/Granted day:2009-10-01
Information query
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