Invention Grant
US07858981B2 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
有权
应变NMOS晶体管具有深碳掺杂区域和升高的施主掺杂源极和漏极
- Patent Title: Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
- Patent Title (中): 应变NMOS晶体管具有深碳掺杂区域和升高的施主掺杂源极和漏极
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Application No.: US12319887Application Date: 2009-01-12
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Publication No.: US07858981B2Publication Date: 2010-12-28
- Inventor: Michael L. Hattendorf , Jack Hwang , Anand Murthy , Andrew N. Westmeyer
- Applicant: Michael L. Hattendorf , Jack Hwang , Anand Murthy , Andrew N. Westmeyer
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036
Abstract:
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
Public/Granted literature
- US20090152601A1 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Public/Granted day:2009-06-18
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