Invention Grant
US07859000B2 LEDs using single crystalline phosphor and methods of fabricating same
有权
使用单晶荧光体的LED及其制造方法
- Patent Title: LEDs using single crystalline phosphor and methods of fabricating same
- Patent Title (中): 使用单晶荧光体的LED及其制造方法
-
Application No.: US12082444Application Date: 2008-04-10
-
Publication No.: US07859000B2Publication Date: 2010-12-28
- Inventor: Arpan Chakraborty
- Applicant: Arpan Chakraborty
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Koppel, Patrick, Heybl & Dawson
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.
Public/Granted literature
- US20090256163A1 LEDs using single crystalline phosphor and methods of fabricating same Public/Granted day:2009-10-15
Information query
IPC分类: