Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US10916802Application Date: 2004-08-11
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Publication No.: US07859007B2Publication Date: 2010-12-28
- Inventor: Hideki Hirayama , Katsushi Akita , Takao Nakamura
- Applicant: Hideki Hirayama , Katsushi Akita , Takao Nakamura
- Applicant Address: JP Osaka-shi JP Wako-shi
- Assignee: Sumitomo Electric Industries, Ltd.,RIKEN
- Current Assignee: Sumitomo Electric Industries, Ltd.,RIKEN
- Current Assignee Address: JP Osaka-shi JP Wako-shi
- Agent W. F. Fasse; W. G. Fasse
- Priority: JP2003-296474 20030820; JP2004-193809 20040630
- Main IPC: H01L31/075
- IPC: H01L31/075
Abstract:
To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
Public/Granted literature
- US20050040414A1 Light-emitting device and manufacturing method thereof Public/Granted day:2005-02-24
Information query
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