Invention Grant
US07859097B2 Semiconductor device and method of fabricating semiconductor device
失效
半导体器件及半导体器件的制造方法
- Patent Title: Semiconductor device and method of fabricating semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US12285744Application Date: 2008-10-14
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Publication No.: US07859097B2Publication Date: 2010-12-28
- Inventor: Kousaku Uoya
- Applicant: Kousaku Uoya
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2007-271178 20071018
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L23/48
Abstract:
A semiconductor device including a semiconductor chip having external connecting terminals formed on one side is restrained to cause chipping in ridge line portion of semiconductor chip. A cover layer 103 is formed on the other side of the semiconductor chip 102. At least a part of an end portion 106 of the cover layer is outside of the ridge line portion 107 of the semiconductor chip.
Public/Granted literature
- US20090102042A1 Semiconductor device and method of fabricating semiconductor device Public/Granted day:2009-04-23
Information query
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