Invention Grant
- Patent Title: Semiconductor package for improving characteristics for transmitting signals and power
- Patent Title (中): 用于提高发射信号和功率特性的半导体封装
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Application No.: US12346963Application Date: 2008-12-31
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Publication No.: US07859115B2Publication Date: 2010-12-28
- Inventor: Jong Hoon Kim , Min Suk Suh , Seung Taek Yang
- Applicant: Jong Hoon Kim , Min Suk Suh , Seung Taek Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0110456 20081107
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor package includes a semiconductor chip having a first region and a second region. Bonding pads are formed and through-holes are defined in the first and second regions. Insulation layers are formed on sidewalls of the through-holes, and through-electrodes formed in the through-holes and connected with corresponding bonding pads. The insulation layers formed in the first and second regions have different thicknesses or dielectric constants.
Public/Granted literature
- US20100117208A1 SEMICONDUCTOR PACKAGE FOR IMPROVING CHARACTERISTICS FOR TRANSMITTING SIGNALS AND POWER Public/Granted day:2010-05-13
Information query
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