Invention Grant
- Patent Title: Enhanced cascode performance by reduced impact ionization
- Patent Title (中): 通过降低冲击电离来增强共源共栅性能
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Application No.: US11750230Application Date: 2007-05-17
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Publication No.: US07859243B2Publication Date: 2010-12-28
- Inventor: Perry Scott Lorenz
- Applicant: Perry Scott Lorenz
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Steven J. Cahill
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/20
Abstract:
The conventional cascode circuit can be improved by adding another transistor in series. The added transistor may use the body effect to reduce supply voltage variations across the cascode transistor as the supply voltage varies. The added transistor reduces impact ionization in the cascode transistor.
Public/Granted literature
- US20080284405A1 Enhanced Cascode Performance By Reduced Impact Ionization Public/Granted day:2008-11-20
Information query
IPC分类:
