Invention Grant
US07859805B2 Electrostatic breakdown protection circuit and semiconductor integrated circuit device therewith 有权
静电击穿保护电路及半导体集成电路装置

  • Patent Title: Electrostatic breakdown protection circuit and semiconductor integrated circuit device therewith
  • Patent Title (中): 静电击穿保护电路及半导体集成电路装置
  • Application No.: US11912412
    Application Date: 2006-12-05
  • Publication No.: US07859805B2
    Publication Date: 2010-12-28
  • Inventor: Masanori Tsuchihashi
  • Applicant: Masanori Tsuchihashi
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Fish & Richardson P.C.
  • Priority: JP2005-353163 20051207
  • International Application: PCT/JP2006/324193 WO 20061205
  • International Announcement: WO2007/066626 WO 20070614
  • Main IPC: H02H9/00
  • IPC: H02H9/00
Electrostatic breakdown protection circuit and semiconductor integrated circuit device therewith
Abstract:
A protection circuit according to the present invention includes: a diode (D1) having an anode thereof connected to a gate signal input terminal and a cathode thereof connected to the gate of an output transistor (N1); a resistor (R1) having one end thereof connected to the gate signal input terminal and the other end thereof connected to ground; a PNP bipolar transistor (Qp1) having the emitter, base and collector thereof connected to the gate of the output transistor (N1), the one end of the resistor (R1) and ground, respectively. With this configuration, it is possible to prevent, without the need for electric power, an open-drain output transistor from erroneously turning on as a result of an electrostatic pulse or the like being applied thereto, and thus to protect the output transistor from electrostatic breakdown.
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