Invention Grant
- Patent Title: Magnetic memory device and write/read method of the same
- Patent Title (中): 磁存储器件和写/读方法相同
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Application No.: US11672261Application Date: 2007-02-07
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Publication No.: US07859881B2Publication Date: 2010-12-28
- Inventor: Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
- Applicant: Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-272039 20061003
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.
Public/Granted literature
- US20080080234A1 MAGNETIC MEMORY DEVICE AND WRITE/READ METHOD OF THE SAME Public/Granted day:2008-04-03
Information query
