Invention Grant
- Patent Title: Resistance memory element and method of manufacturing the same, and semiconductor memory device
- Patent Title (中): 电阻记忆元件及其制造方法以及半导体存储器件
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Application No.: US12104845Application Date: 2008-04-17
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Publication No.: US07859886B2Publication Date: 2010-12-28
- Inventor: Kentaro Kinoshita
- Applicant: Kentaro Kinoshita
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistance memory element memorizing a high resistance state or a low resistance state in a memory region and switched between the high resistance state and the low resistance state by an application of a voltage includes a resistance memory layer 42 of a resistance memory material, an electrode 38 and an electrode 40 arranged, sandwiching the resistance memory layer 42. The electrode 38 and the electrode 40 are formed on the same surface, whereby the manufacturing process of the resistance memory element can be simplified.
Public/Granted literature
- US20080232154A1 RESISTANCE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2008-09-25
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