Invention Grant
US07859887B2 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
有权
含有碳储存材料的多层非易失性存储器件及其制造和使用方法
- Patent Title: Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
- Patent Title (中): 含有碳储存材料的多层非易失性存储器件及其制造和使用方法
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Application No.: US12153873Application Date: 2008-05-27
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Publication No.: US07859887B2Publication Date: 2010-12-28
- Inventor: Xiying Chen , Tanmay Kumar
- Applicant: Xiying Chen , Tanmay Kumar
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of programming a nonvolatile memory cell includes applying at least one initialization pulse having a duration of at least 1 ms, followed by applying plural programming pulses having a duration of less than 1 ms. The cell includes a steering element located in series with a storage element, and the storage element includes a carbon material.
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