A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array including a plurality of word lines; a parameter storage part which stores a parameter related to a programming voltage which is applied to a word line for programming data; a word line selection circuit which selects a word line among the plurality of word lines which is connected to a memory cell to be programmed with data; a voltage application circuit which applies a programming voltage to the selected word line according to the parameter; a verify circuit which performs verification of programmed data; a control part which outputs a signal for selecting a word line and repeats the operations of the voltage application circuit until the verification is successful; a calculation circuit which calculates an average value of the number of times the control part repeats the operations of the voltage application circuit per each word line; and a parameter setting circuit which sets the parameter using the average value calculated.