Invention Grant
- Patent Title: Semiconductor memory device and test method thereof
- Patent Title (中): 半导体存储器件及其测试方法
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Application No.: US12233278Application Date: 2008-09-18
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Publication No.: US07859938B2Publication Date: 2010-12-28
- Inventor: Yasushi Matsubara
- Applicant: Yasushi Matsubara
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-141041 20060522
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
When a predetermined code is set to a mode register, a switching signal generating circuit is activated, and a switching signal TCLKE becomes at a high level. When the switching signal TCLKE becomes at a high level, input data supplied from a data input and output terminal DQ is used as an internal clock ICLK. Accordingly, during a test in a wafer state, a clock signal can be received from the data input and output terminal DQ, even when a clock terminal, an address terminal, and a command terminal are connected in common to plural semiconductor memory devices. Therefore, a code for artificially performing a fine adjustment of a reference voltage can be individually supplied for each chip.
Public/Granted literature
- US20090016121A1 SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD THEREOF Public/Granted day:2009-01-15
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