Invention Grant
- Patent Title: Method for manufacturing piezoelectric resonator element
- Patent Title (中): 制造压电谐振元件的方法
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Application No.: US11689669Application Date: 2007-03-22
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Publication No.: US07861387B2Publication Date: 2011-01-04
- Inventor: Akira Hokibara , Sachi Yamamoto
- Applicant: Akira Hokibara , Sachi Yamamoto
- Applicant Address: JP
- Assignee: Epson Toyocom Corporation
- Current Assignee: Epson Toyocom Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-080404 20060323
- Main IPC: H01L41/04
- IPC: H01L41/04 ; B44C1/22

Abstract:
A method for manufacturing a piezoelectric resonator element from a substrate made of piezoelectric material is provided. The method includes forming a first dry etching mask in a first masking region of a first surface of the substrate in a first mask forming process and performing a first dry etching process to remove a portion of the substrate in areas between the first dry etching mask after the first mask forming process. The method further includes maintaining a first un-etched portion of the substrate between the first dry etching mask after the first dry etching process and removing the first dry etching mask in a mask removing process after the first dry etching process. A wet etching process is performed to remove the first un-etched portion of the substrate after the mask removing process, thereby forming the piezoelectric resonator element.
Public/Granted literature
- US20070222342A1 Method for manufacturing piezoelectric resonator element Public/Granted day:2007-09-27
Information query
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