Methods and associated structures of forming a microelectronic device are described. Those methods may include amorphizing at least one contact area of a source/drain region of a transistor structure by implanting through at least one contact opening, forming a first layer of metal on the at least one contact area, forming a second layer of metal on the first layer of metal, selectively etching a portion of the second metal layer, annealing the at least one contact area to form at least one silicide, and removing the unreacted first metal layer and second metal layer from the transistor structure and forming a conductive material in the at least one contact opening.