Invention Grant
- Patent Title: High temperature transducer using SOI electronics
- Patent Title (中): 使用SOI电子的高温传感器
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Application No.: US12291868Application Date: 2008-11-14
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Publication No.: US07861597B2Publication Date: 2011-01-04
- Inventor: Anthony D. Kurtz , Wolf S. Landmann
- Applicant: Anthony D. Kurtz , Wolf S. Landmann
- Applicant Address: US NJ Leonia
- Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee Address: US NJ Leonia
- Agency: Troutman Sanders LLP
- Agent James E. Schutz; Dean Y. Shahriari
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
There is disclosed a high temperature pressure sensing system which includes a SOI Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI technology. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI technology and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.
Public/Granted literature
- US20100125426A1 High temperature transducer using SOI electronics Public/Granted day:2010-05-20
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