Invention Grant
US07861667B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
有权
用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
- Patent Title: Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
- Patent Title (中): 用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
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Application No.: US10445146Application Date: 2003-05-23
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Publication No.: US07861667B2Publication Date: 2011-01-04
- Inventor: Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
- Applicant: Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/00

Abstract:
An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
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