Invention Grant
- Patent Title: Gas supply system for semiconductor manufacturing apparatus
- Patent Title (中): 半导体制造装置用气体供给系统
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Application No.: US12061982Application Date: 2008-04-03
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Publication No.: US07862638B2Publication Date: 2011-01-04
- Inventor: Shuji Moriya , Ken Nakao
- Applicant: Shuji Moriya , Ken Nakao
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-102556 20070410
- Main IPC: B01D46/00
- IPC: B01D46/00 ; H01L21/205

Abstract:
A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
Public/Granted literature
- US20080251018A1 GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2008-10-16
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