Invention Grant
- Patent Title: Method for forming contact hole on semiconductor device
- Patent Title (中): 在半导体器件上形成接触孔的方法
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Application No.: US11752609Application Date: 2007-05-23
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Publication No.: US07862735B2Publication Date: 2011-01-04
- Inventor: Haeng Leem Jeon
- Applicant: Haeng Leem Jeon
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2006-0046536 20060524
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01L21/302
Abstract:
A method of forming a relatively fine contact hole using two masks. The two masks may have only their edge portions open, which may overlap each other.
Public/Granted literature
- US20070272656A1 METHOD FOR FORMING CONTACT HOLE ON SEMICONDUCTOR DEVICE Public/Granted day:2007-11-29
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