Invention Grant
- Patent Title: Transfer mask for exposure and pattern exchanging method of the same
- Patent Title (中): 转印掩模的曝光和图案交换方法相同
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Application No.: US11030963Application Date: 2005-01-10
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Publication No.: US07862959B2Publication Date: 2011-01-04
- Inventor: Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
- Applicant: Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
- Applicant Address: JP Tokyo-To JP Tokyo-To
- Assignee: Octec Inc.,Tokyo Electron Limited
- Current Assignee: Octec Inc.,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo-To JP Tokyo-To
- Agency: Smith, Gambrell & Russell, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F7/20
Abstract:
The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
Public/Granted literature
- US20050118516A1 Transfer mask for exposure and pattern exchanging method of the same Public/Granted day:2005-06-02
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