• Patent Title: Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks
  • Application No.: US11630131
    Application Date: 2005-06-22
  • Publication No.: US07862960B2
    Publication Date: 2011-01-04
  • Inventor: Masaru TanabeMasaru Mitsui
  • Applicant: Masaru TanabeMasaru Mitsui
  • Applicant Address: JP Tokyo
  • Assignee: Hoya Corporation
  • Current Assignee: Hoya Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2004-183287 20040622
  • International Application: PCT/JP2005/011434 WO 20050622
  • International Announcement: WO2005/124455 WO 20051229
  • Main IPC: G03F1/00
  • IPC: G03F1/00
Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks
Abstract:
There are provided a manufacturing method of a transparent substrate for a mask blank, a mask blank, or an exposure mask adapted to prevent occurrence of a transfer pattern defect or a mask pattern defect, by correcting a recessed defect existing on the surface of the transparent substrate, and a defect correction method of an exposure mask.With respect to an exposure mask having a transparent substrate 1 formed thereon with a mask pattern 2 which becomes a transfer pattern, correction is performed by removing, by the use of a needle-shaped member 4, a peripheral portion of a recessed defect 3 formed on a surface 1a of the substrate, where the mask pattern 2 is not formed, so as to induce a reduction in transmission light quantity which causes a transfer pattern defect, thereby reducing a level difference between the surface of the substrate and the depth of the recessed defect. This correction of the recessed defect is carried out at the stage before forming a mask pattern forming thin film on the transparent substrate. A mask blank and an exposure mask are manufactured by the use of the transparent substrate applied with the correction of the recessed defect.
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