Invention Grant
- Patent Title: Halftone type phase shift mask blank and phase shift mask thereof
- Patent Title (中): 半色调型相移掩模空白及其相移掩模
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Application No.: US12542282Application Date: 2009-08-17
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Publication No.: US07862963B2Publication Date: 2011-01-04
- Inventor: Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- Applicant: Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2002-047050 20020222; JP2002-124769 20020425; JP2002-325200 20021108
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
Public/Granted literature
- US20100040961A1 HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF Public/Granted day:2010-02-18
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