Invention Grant
- Patent Title: Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device
- Patent Title (中): 用于检测源自化学溶液的缺陷的方法和制造半导体器件的方法
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Application No.: US11797529Application Date: 2007-05-04
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Publication No.: US07862965B2Publication Date: 2011-01-04
- Inventor: Hisako Aoyama , Yuji Kobayashi
- Applicant: Hisako Aoyama , Yuji Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-132765 20060511
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00
Abstract:
A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.
Public/Granted literature
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