Invention Grant
US07862975B2 Carrier core material for an electrophotographic developer, carrier, and electrophotographic developer using the carrier
有权
用于电子照相显影剂,载体和使用载体的电子照相显影剂的载体芯材料
- Patent Title: Carrier core material for an electrophotographic developer, carrier, and electrophotographic developer using the carrier
- Patent Title (中): 用于电子照相显影剂,载体和使用载体的电子照相显影剂的载体芯材料
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Application No.: US12399164Application Date: 2009-03-06
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Publication No.: US07862975B2Publication Date: 2011-01-04
- Inventor: Yasunori Tabira , Koji Aga , Tomoyuki Suwa
- Applicant: Yasunori Tabira , Koji Aga , Tomoyuki Suwa
- Applicant Address: JP Tokyo JP Chiba
- Assignee: Mitsui Mining & Smelting Co., Ltd.,Powdertech Co., Ltd.
- Current Assignee: Mitsui Mining & Smelting Co., Ltd.,Powdertech Co., Ltd.
- Current Assignee Address: JP Tokyo JP Chiba
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-090651 20080331
- Main IPC: G03G9/113
- IPC: G03G9/113 ; G03G9/107

Abstract:
A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109 Ω, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010 Ω.
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