- Patent Title: Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
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Application No.: US12228010Application Date: 2008-08-07
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Publication No.: US07862989B2Publication Date: 2011-01-04
- Inventor: Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
- Applicant: Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Thomas A. Beck; Daniel P. Morris
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
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